Research Partnership with Sanan
The Institute for Power Electronics (LEE) at FAU Erlangen-Nürnberg entered into a Research Partnership with Sanan Semiconductor, a vertically integrated SiC supplier with inhouse development and manufacturing of SiC substrates, epitaxial wafers, Diode/Mosfet dies and packaged products. “This partnership with one of Germany’s leading academic research institutes for SiC puts Sanan Semiconductor in a strong position”, says Mr. Tony Chiang, CEO of Sanan Semiconductor. Dr. Ming-Che Kao, General Manager of Sanan Europe GmbH says, “Europe is a key market for us, and this partnership aims at strengthening our system innovation, to help to get the best performance of our semiconductors”.
“Compared to traditional Silicon (Si)- based technologies, SiC power semiconductors offer significant efficiency and power density improvements in various applications. Despite the increasing adoption of SiC in power electronic applications, several system-level barriers still inhibit the full potential of SiC. This collaboration is a step towards overcoming these barriers”, says Dr. Ajay Poonjal Pai, Head of WBG Innovation.
“We are pleased to be able to start our first long-term joint research project with Sanan! This strong partner will enable us to advance into new performance regions with innovative SiC devices” says Prof. Dr.-Ing. Martin März, head of the Chair of Power Electronics at FAU.
Bodo’s Current Issue (bodospower.com), Ausgabe September 2024